SOI WAFER
6英寸产品规格
Crystal Growth Method: CZ
Overall Wafer : Diameter 150 mm
Orientation : <100>
Type/Dopant : P-type/Boron
Front side : Finish Mirror Polished
Backside : Finish Etched + Poly-si + Oxide
SOI layer Mean Thickness(Total): 0.22 ± 0.01 μm
Resistivity : 10 ~ 20 ohm-cm
Normal edge exclusion: <= 5mm
Primary flat location: <110>
Primary flat length : 57.5 +/- 2.5 mm
Carbon content : <= 0.5 ppma
Oxygen content : 11~15 ppma
Light point defects count: 100 @ 0.2 μm
HF defects : <= 0.5 /cm2
Buried Oxide Layer Mean Thickness: 3μm +/- 5%
Handel Wafer Thickness: 675+/-15 μm
Crystal Growth Method: CZ
Orientation : <100>
Type/Dopant : P-type/Boron
Resistivity : 10 ~ 20 ohm-cm
Primary flat location: <110>
Primary flat length : 57.5 +/- 2.5 mm
Carbon content : <= 0.5 ppma
Oxygen content : 11~15 ppma
4英寸产品规格
Overall Wafer : Diameter 100 mm
Handel Wafer Thickness: 525+/-15 μm
SOI layer Mean Thickness(Total): 0.20 ± 0.01 μm
Buried Oxide Layer Mean Thickness: 0.375μm +/- 5%
注:我司可以提供切割服务,比如将wafer切割成 10x10mm 15x15mm
其他尺寸可以接受预定