氮化镓（GaN）单晶基片

氮化镓（GaN）单晶基片

元晶科技可以提供<0001>晶向高品质、性能优、低价位的GaN单晶基片。

氮化镓（GaN）单晶片（2" GaN Single Crystal Wafer）

产品规格：

产品型号 Item	GaN - 5	GaN - 10	GaN - 15		GaN - 1.5"
尺寸 Dimensions	5 x 5.5mm	10 x 10.5mm	14 x 15mm		Φ38.1 ±0.5mm
孔洞密度 Marco Defect Density	A Level	0 cm-2			<= 2 cm-2
	B Level	1~3 cm-2			> 2 cm-2
	C Level	>= 4 cm-2
厚度 Thickness	350 ± 20 μm 280 ± 20 μm				350 ± 20 μm
晶体取向 Orientation	C-axis <0001> ± 0.5º
次定位边 Secondary Orientation Flat				<11-20>±3º 6±1.0mm
TTV (Total Thickness Variation)	<= 15 μm				<= 15 μm
弯曲度 (BOW)	<= 20 μm				<= 20 μm
导电类型 Conduction Type	N-type	Semi-insulating			N-type
电阻率 Resistivity (300K)	< 0.5 Ω-cm	> 10 6 Ω-cm			< 0.5 Ω-cm
位错密度 Dislocation Density	Less than 5 x 10 6 cm-2
有效面积 Useable Surface Area	> 90%
抛光 Polishing	Front Surface: Ra< 0.2nm,Epi-ready polished Back Surface: 1. Fine ground 2.Rough grinded

标准包装：

Packaged in a class 100 clean room environment,in single wafer containers,under a nitrogen atmosphere.